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2N5197 - N-Channel Monolithic Dual JFETs

Download the 2N5197 datasheet PDF. This datasheet also covers the 2N5196 variant, as both devices belong to the same n-channel monolithic dual jfets family and are provided as variant models within a single manufacturer datasheet.

General Description

match.

(Derate 2.

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Note: The manufacturer provides a single datasheet file (2N5196-NationalSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Process 83 2N51 96-99 N-Channel Monolithic Dual JFETs General Description The 2N5196thru 2N5199 series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifiers requiring low leakage and tight match. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current Device Dissipation (Each Side), T/ = 85°C (Derate 2.56 mW/°C) -50V 50 mA 250 mW Total Device Dissipation, Ta = 85°C (Derate 4.3 mW/°C) 500 mW Storage Temperature Range Lead Temperature (1/16" from case for 10 seconds) 65°Cto+200°C a 300 C 0175- 0195 " (4445 -4.9531 0.209 0.230 (5.309 SM2! 0170-0.210 (4.318 5T334) SLATIMG PLANE mnr 016 -0 019 ddq] 0.030 PIN FET (12) 1 SI 2 D1 3 G1 5 S2 6 D2 7 G2 0.028-0.