GENERAL DESCRIPTION
TO-78 ABSOLUTE MAXIMUM RATINGS
(25°o Gate-to-Gate Voltage ±25V Gate-Drain or Gate-Source Voltage Gate Current -25V 50 mA Device Dissipation {Each Side), (Derate 3 mW/°C) 367 mW Total Device Dissipation, (Derate 4 mW/°C) 500 mW Storage Temperature Range -65°C to +200°C Lead Temperature (1/16" from case for 10 seconds) 300°C PIN FET 1 S 2 D 3 G 4 Case 5 S 6 D 7 G ELECTRICAL CHARACTERISTICS
(25° unless otherwise noted) PARAMETER CONDITIONS IGSS Gate Reverse Current bvqss v GS(off) VGS Gate Reverse Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage IG Gate Operating Current IDSS 9fs gfs 9os 9oss Ciss Crss Saturation Drain Current Common-Source Forward Transconductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance VGS = -15V, V DS =0 lG = - 1uA, V DS =0 VDS = 10V, Iq = 1 nA 150 C vdg = 10V, Dl = 5 mA 12SX vds = 10V, V G s = 0...
National Semiconductor