2N5911
2N5911 is N-Channel Monolithic Dual JFET manufactured by National Semiconductor.
Description
The 2N5911 thru2N5912 series of N-channel monolithic dual JFETs is designed for wideband, low noise differen- tial amplifiers.
TO-78
Absolute Maximum Ratings (25°o
Gate-to-Gate Voltage
±25V
Gate-Drain or Gate-Source Voltage Gate Current
-25V
50 m A
Device Dissipation {Each Side),
(Derate 3 m W/°C)
367 m W
Total Device Dissipation,
(Derate 4 m W/°C)
500 m W
Storage Temperature Range
-65°C to +200°C
Lead Temperature (1/16" from case for 10 seconds)
300°C
PIN FET
4 Case
Electrical Characteristics (25° unless otherwise noted)
PARAMETER
CONDITIONS
IGSS
Gate Reverse Current bvqss v GS(off) VGS
Gate Reverse Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage
Gate Operating Current
IDSS
9fs gfs 9os 9oss Ciss Crss
Saturation Drain Current mon-Source Forward Transconductance mon-Source Forward Transconductance mon-Source Output Conductance mon-Source Output Conductance mon-Source Input Capacitance mon-Source Reverse Transfer Capacitance
VGS = -15V, V DS =0 l G =
- 1u A, V DS =0 VDS = 10V, Iq = 1 n A
150 C vdg = 10V, Dl = 5 m A
12SX vds = 10V, V G s = 0V, (Note 1) f = 1 k Hz f = 100 MHz f = 1 k Hz f = 100 MHz vdg = 10V, Iq = 5 m A f = 1 MHz en
Equivalent Short-Circuit Input Noise Voltage f = 10 k...
