DS90CR286A Datasheet | National Semiconductor

Description The DS90CR286A receiver converts the four LVDS data streams (Up to 1.848 Gbps throughput or 231 Megabytes/ sec bandwidth) back into parallel 28 bits of CMOS/TTL data. Also available is the DS90CR216A that converts the three LVDS data streams (Up to 1.386 Gbps throughput or 173 Megabytes/sec bandwidth) back into parallel 21 bits of CMOS/TTL data. Both Receivers’ outputs are Rising edge strobe. This chipset is an ideal means to solve EMI and cable size problems associated with wide, high speed TTL interfaces. Features n n n n n n n n n n 20 to 66 MHz shift clock support 50% duty cycle on receiver output clock Best- in- Class Set & Hold Times on Rx OUTPUTs Rx power consumption < 270 m W (typ) @66MHz Worst Case Rx Power-down mode < 200µW (max) ESD rating > 7 k V (HBM), > 700V (EIAJ) PLL requires no external ponents patible with TIA/EIA-644 LVDS standard Low profile 56-lead or 48-lead TSSOP package Operating Temperature: - 40˚C to +85˚C Block Diagrams DS90CR286A DS90CR216A DS100873-31 Order Number DS90CR216AMTD See NS Package Number MTD48 DS100873-30 Order Number DS90CR286AMTD See NS Package Number MTD56 TRI-STATE ® is a registered trademark of National Semiconductor Corporation. © 2000 National Semiconductor Corporation DS100873 .national. DS90CR286A/DS90CR216A Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage (VCC) - 0.3V to +4V CMOS/TTL Output Voltage - 0.3V to (VCC + 0.3V) LVDS Receiver Input Voltage - 0.3V to (VCC + 0.3V) Junction Temperature +150˚C Storage Temperature - 65˚C to +150˚C Lead Temperature (Soldering, 4 sec) +260˚C Maximum Package Power Dissipation Capacity @ 25˚C MTD56 (TSSOP) Package: DS90CR286A 1.61 W MTD48 (TSSOP) Package: DS90CR216A 1.89 W Package Derating: DS90CR286A DS90CR216A ESD Rating (HBM, 1.5 kΩ, 100 p F) (EIAJ, 0Ω, 200 p F) 12.4 m W/˚C above +25˚C 15 m W/˚C above +25˚C >...