LM113 Datasheet | National Semiconductor

Description The LM113 LM313 are temperature pensated low voltage reference diodes They feature extremely-tight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature stability The diodes are synthesized using transistors and resistors in a monolithic integrated circuit As such they have the same low noise and long term stability as modern IC op amps Further output voltage of the reference depends only on highly-predictable properties of ponents in the IC so they can be manufactured and supplied to tight tolerances Dynamic impedance of 0 3X from 500 m A to 20 m A Temperature stability typically 1% overb55 C to 125 C range (LM113) 0 C to 70 C (LM313) Y Tight tolerance g 5% g 2% or g 1% The characteristics of this reference remend it for use in bias-regulation circuitry in low-voltage power supplies or in battery powered equipment The fact that the breakdown voltage is equal to a physical property of silicon the energy-band gap voltage makes it useful for many temperature-pensation and temperature-measurement functions Features Low breakdown voltage 1 220V Schematic and Connection Diagrams Metal Can Package Order Number LM113H LM113H 883 LM113-1H LM113-1H 883 LM113-2H LM113-2H 883 or LM313H See NS Package Number H02A TL H 5713 - 1 Typical Applications Low Voltage Regulator Level Detector for Photodiode Solid tantalum TL H 5713 - 2 C1995 National Semiconductor Corporation TL H 5713 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications (Note 3) Power Dissipation (Note 1) 100 m W Reverse Current 50 m A Forward Current 50 m A Storage Temperature Range Lead Temperature (Soldering 10 seconds) Operating Temperature Range LM113 LM313 b 65 C to a 150 C 300 C b 55 C to a 125 C 0 C to a 70 C Electrical Characteristics (Note 2) Parameter Reverse...