| Part number | PDMB100E6 |
|---|---|
| Datasheet | PDMB100E6_NihonInterElectronicsCorporation.pdf |
| File Size | 273.60 KB |
| Manufacturer | Nihon Inter Electronics Corporation |
| Description | IGBT |
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－ － ２.１ － 5,000 ０.１５ ０.２５ ０.１０ ０.３５ Ｍａｘ. ２.４ ０.２５ Ｕｎｉｔ Ａ ＤＣ １ｍｓ Ｕｎｉｔ Ｖ μｓ □ 熱 的 特 性 ： ＴＨＥＲＭＡＬ ＣＨＡＲＡＣＴＥＲＩＳＴＩＣＳ Ｃｈａｒａｃｔｅｒｉｓｔｉｃ 熱 抵 抗 ＩＧＢＴ Ｔhermal Ｉmpedance Ｄiode Ｓｙｍｂｏｌ Ｒth(j-c) Ｔｅｓｔ Ｃｏｎｄｉｔｉｏｎ Junction to Case （Tc測定点チップ直下） Ｍｉｎ. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs.
See all Nihon Inter Electronics Corporation datasheets
| Part Number | Description |
|---|---|
| PDMB100A6 | IGBT |
| PDMB100B12 | IGBT |
| PDMB100B12C | IGBT |
| PDMB100B12C2 | IGBT |
| PDMB100BS12 | IGBT |
| PDMB100BS12C | IGBT |
| PDMB150A6 | IGBT |
| PDMB150B12 | IGBT |
| PDMB150B12C | IGBT |
| PDMB150B12C2 | IGBT |
