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P1703BDG - N-Channel Logic Level Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the P1703BDG, a member of the P1703BDG_Niko N-Channel Logic Level Enhancement Mode Field Effect Transistor family.

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Datasheet Details

Part number P1703BDG
Manufacturer Niko-Sem
File Size 305.25 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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    www.DataSheet4U.com NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P1703BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 17m ID 46A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS ±20 46 28 140 20 140 5.6 55 33 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C ID IDM IAR A L = 0.1mH L = 0.05mH TC = 25 °C TC = 100 °C EAS EAR PD Tj, Tstg TL mJ W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.
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