P1703BDG
P1703BDG is N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Niko-Sem.
- Part of the P1703BDG_Niko comparator family.
- Part of the P1703BDG_Niko comparator family.
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NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor
TO-252 (DPAK) Lead-Free
PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 17m ID 46A 1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation
2 1
SYMBOL VGS
LIMITS ±20 46 28 140 20 140 5.6 55 33 -55 to 150 275
UNITS V
TC = 25 °C TC = 100 °C
ID IDM IAR
L = 0.1m H L = 0.05m H TC = 25 °C TC = 100 °C
EAS EAR PD Tj, Tstg TL m J
Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink
1 2 1
°C
SYMBOL RθJC RθJA RθCS
TYPICAL
MAXIMUM 3 70
UNITS
°C / W
Pulse width limited by maximum junction temperature. Duty cycle ≤ 1
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C 25 0.8 1.2 2.5 ±250 25 250 n A µA V LIMITS UNIT MIN TYP MAX
SEP-24-2004
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NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor
TO-252 (DPAK) Lead-Free
45 18 14 16 25 17 A m S
On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
2 2
ID(ON) RDS(ON) gfs
VDS = 10V, VGS = 10V VGS = 7V, ID = 18A VGS = 10V, ID = 20A VDS = 15V, ID =...
