P1703BDG Datasheet
P1703BDG Datasheet (UNIKC)
UNIKC
P1703BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 16mΩ @VGS = 10V ID 42A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDI.
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P1703BDG Datasheet (Niko-Sem)
Niko-Sem
NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P1703BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 17m ID 46A 1. GATE 2. DRAIN 3. SO.
RISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V .