P1703BDG
P1703BDG is N-Channel MOSFET manufactured by UNIKC.
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 16mΩ @VGS = 10V
ID 42A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
42 26 168
Avalanche Current
IAS 27
Avalanche Energy
L=0.1m H
Power Dissipation
TC= 25 °C TC= 100°C
50 20
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A m J W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 39A.
SYMBOL Rq JC
TYPICAL MAXIMUM UNITS 2.5 °C / W
REV 1.0 1 2014/5/8
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER...
