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NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor
P2103NV
SOP-8
PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel
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RDS(ON) 21mΩ 35mΩ
ID 7A -6A G : GATE D : DRAIN S : SOURCE
30 -30
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.)
1 1
SYMBOL VDS VGS
N-Channel P-Channel 30 ±20 7 6 28 2 1.3 -55 to 150 275 -30 ±20 -6 -5 -24
UNITS V V
TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C
ID IDM PD Tj, Tstg TL
A
W
°C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient
1 2
SYMBOL RθJA
TYPICAL
MAXIMUM 62.
P2103NV Datasheet
