P2103NV Datasheet | Niko

NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel .. RDS(ON) 21mΩ 35mΩ ID 7A -6A G : GATE D : DRAIN S : SOURCE 30 -30 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) 1 1 SYMBOL VDS VGS N-Channel P-Channel 30 ±20 7 6 28 2 1.3 -55 to 150 275 -30 ±20 -6 -5 -24 UNITS V V TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C ID IDM PD Tj, Tstg TL °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.5 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA N-Ch P-Ch N-Ch P-Ch 30 -30 0.8 -0.8 1.5 -1.5 2.5 -2.5 V MIN TYP MAX UNIT OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V .. Zero Gate N-Ch P-Ch N-Ch P-Ch ±100 ±100 1 -1 10 -10 28 -24 21 44 14 28 8 7 32 60 n A Voltage Drain Current IDSS VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch VDS = -20V, VGS = 0V, TJ = 55 °C P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch µA On-State Drain...