P2103HVG Datasheet | Niko

NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS 30 RDS(ON) 21mΩ ID 7A G : GATE D : DRAIN S : SOURCE .. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) SYMBOL VDS VGS LIMITS 30 ±20 7 6 40 2 1.3 -55 to 150 275 UNITS V V TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C ID IDM PD Tj, Tstg TL °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.5 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 °C 30 1 1.5 3 V LIMITS UNIT MIN TYP MAX ±100 n A 1 10 µA Jun-29-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) RDS(ON) gfs VDS = 5V, VGS = 10V VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A VDS = 15V, ID = 5A DYNAMIC 25 21 15 24 35 21 A mΩ S .. Input Capacitance Ciss Coss Crss Qg Qgs Qgd 1650 VGS = 0V, VDS = 15V, f = 1MHz 365 170 18 VDS = 0.5V(BR)DSS, VGS = 5V, ID = 7A 5.5 6.7 11 VDS = 15V ID ≅ 1A, VGS = 10V, RGEN = 6Ω 9 25 11 20 18 40 20 n S 25 n C p F Output Capacitance Reverse Transfer Capacitance Total Gate...