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P2103NVG
N- & P- Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
NChannel PChannel
30 21mΩ @VGS = 10V -30 34mΩ @VGS = 10V
ID 8A -6A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS Drain-Source Voltage
SYMBOL VDS
N- PChannel Channe
30 -30
Gate-Source Voltage
VGS ±20 ±20
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
8 -6 6 -5
Pulsed Drain Current1
IDM 36 -27
Avalanche Current
IAS 26 -27
Avalanche Energy
L =0.1mH
EAS
35 38
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 1.3
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P2103NVG Datasheet
