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P2103HVG
Dual N--Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 21mΩ @VGS = 10V
ID 8A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
8 6 40
Avalanche Current Avalanche Energy2
L = 0.1mH
IAS EAS
26 35
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 1.28
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient Junction-to-Lead 1Pulse width limited by maximum junction temperature. 2VDD = 15V. Starting TJ = 25°C.
SYMBOL
RqJA RqJL
TYPICAL
MAXIMUM
62.
P2103HVG Datasheet
