P3057LD
P3057LD is N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Niko.
NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor
TO-252 (DPAK)
PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 12A 1. GATE 2. DRAIN 3. SOURCE
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation
2 1
SYMBOL VGS
LIMITS ±20 12 8 45 60 3 48 20 -55 to 150 275
UNITS V
TC = 25 °C TC = 100 °C L = 0.1m H L = 0.05m H TC = 25 °C TC = 100 °C
ID IDM EAS EAR PD Tj, Tstg TL
A m J
Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink
1 2 1
°C
SYMBOL RθJC RθJA RθCS
TYPICAL
MAXIMUM 3 75
UNITS
°C / W
Pulse width limited by maximum junction temperature. Duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V 12 25 0.8 1.2 2.5 V LIMITS UNIT MIN TYP MAX
±250 n A 25 250 µA A
APR-14-2003
NIKO-SEM
N-Channel Logic Level Enhancement Mode Field Effect Transistor
VGS = 5V, ID = 12A VGS = 10V, ID = 12A VDS = 15V, ID = 12A DYNAMIC
TO-252 (DPAK)
Drain-Source On-State Resistance1 Forward Transconductance1
RDS(ON) gfs
70 48 16
115 85 mΩ S
Input Capacitance Output Capacitance
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