P3057LCG Datasheet | Niko

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor SOT-89 Lead-Free PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 6A SYMBOL VGS TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C ID IDM PD Tj, Tstg TL LIMITS ±20 6 4 20 3 1.2 -55 to 150 275 1. GATE 2. DRAIN 3. SOURCE .. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation UNITS V Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 1 °C SYMBOL RθJC RθJA TYPICAL MAXIMUM 18 160 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 4.5V, ID = 3A VGS = 10V, ID = 6A VDS = 15V, ID = 6A 6 70 48 16 115 85 25 0.8 1.2 2.5 V LIMITS UNIT MIN TYP MAX ±250 n A 25 250 µA A mΩ S Jun-29-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor DYNAMIC SOT-89 Lead-Free Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge .. Gate-Drain 2 2 Ciss Coss Crss Qg Qgs Qgd 450 VGS = 0V, VDS = 15V, f = 1MHz 200 60 15 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 6A 2.0 7.0 6.0 VDS = 15V, RL = 1Ω ID ≅ 12A, VGS = 10V, RGS = 2.5Ω 6.0 20 5.0 n S n C p F Gate-Source Charge...