Niko P3057LS
N-Channel Logic Level Enhancement FET
| Part No. | P3057LS |
|---|---|
| Datasheet | P3057LS Download |
| Manufacturer |  Niko |
| Description | N-Channel Logic Level Enhancement FET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS ±20 12 8 45 60 3 48 20 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C L = 0.1mH L = 0.05mH TC = 25 °C TC = 100 °C ID IDM EAS EAR PD Tj, Tstg TL A mJ W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 1 °C SYMBOL RθJC RθJA RθCS TYPICAL MAXIMUM 3 75 UNITS °C / W 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1%ELECTRICAL CHARACTERISTICS
(TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS...
