P3057LS Datasheet | Niko

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-263 PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 12A 1. GATE 2. DRAIN 3. SOURCE .. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS ±20 12 8 45 60 3 48 20 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C L = 0.1m H L = 0.05m H TC = 25 °C TC = 100 °C ID IDM EAS EAR PD Tj, Tstg TL A m J Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1 2 1 °C SYMBOL RθJC RθJA RθCS TYPICAL MAXIMUM 3 75 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C 25 0.8 1.2 2.5 V LIMITS UNIT MIN TYP MAX ±250 n A 25 250 µA MAY-6-2003 NIKO-SEM On-State Drain Current1 Drain-Source On-State Resistance1 N-Channel Logic Level Enhancement Mode Field Effect Transistor ID(ON) RDS(ON) gfs VDS = 10V, VGS = 10V VGS = 5V, ID = 12A VGS = 10V, ID = 12A VDS = 15V, ID = 12A DYNAMIC 12 TO-263 A 70 48 16 115 85 mΩ S Forward Transconductance1 Input Capacitance .. Ciss Coss Crss...