MSM5718B70 Overview
The 18-Megabit Rambus™ DRAM (RDRAM™) is an extremely high-speed CMOS DRAM organized as 2M words by 9 bits. It is capable of bursting up to 256 bytes of data at less than 2 nanoseconds per byte. The use of Rambus Signaling Logic (RSL) technology makes transfer rates greater than 500 MHz achievable while using conventional system and board design methodologies.
MSM5718B70 Key Features
- Rambus Interface: Over 500 MB/sec peak transfer rate per RDRAM Rambus Signaling Logic (RSL) interface Synchronous protoc
- Dual 2KByte sense amplifiers may be operated as caches for low latency access
- Random Access mode enables any burst order at full band width
- Features for graphics include random-access mode, write-per-bit and mask-per-bit operations
- Control and refresh logic entirely self-contained
- On-chip registers for flexible addressing and timing
- Available in horizontal surface mount plastic package (SHP32-P-1125-0.65-K)
- Fully engineered solution includes clock chips, memory expansion sockets and simple layout
- For graphics subsystems addressing display resolutions of 1024
- 8 or above, it provides high performance, fewest controller pins, and ease of memory expansion
MSM5718B70 Applications
- Rambus Interface: Over 500 MB/sec peak transfer rate per RDRAM Rambus Signaling Logic (RSL) interface Synchronous protocol for fast block-oriented transfers Dir
- Dual 2KByte sense amplifiers may be operated as caches for low latency access