MSM548512L Datasheet | OKI Electric

DESCRIPTION The MSM548512L is fabricated using OKI’s CMOS silicon gate process technology. This process, coupled with single-transister memory storage cells, permits maximum circuit density, minimum chip size and high speed. MSM548512L has Self-refresh mode in addition to Address-refresh mode and Auto-refresh mode. In the Self-refresh mode the internal refresh timer and address counter refresh the dynamic memory cells automatically. This series allows low power consumption when using standby mode with Self-refresh. The MSM548512L also features a static RAM-like write function that writes the data into the memory cell at the rising edge of WE. FEATURES - Large capacity - Fast access time - Low power - Refresh free - Logic patible - Single power supply - Refresh - Package patible - Package options: 32-pin 600 mil plastic DIP 32-pin 525 mil plastic SOP : : : : : : : : 4-Mbit (524,288-word - 8 bits) 80 ns max. 200 µA max. (standby with Self-refresh) Self refresh SRAM WE pin, no address multiplex 5 V ± 10% 2048 cycle/32 ms auto-address refresh SRAM standard package (DIP32-P-600-2.54) (Product : MSM548512L-xx RS) (SOP32-P-525-1.27-K) (Product : MSM548512L-xx GS-K) xx indicates speed rank. PRODUCT FAMILY Family MSM548512L-80RS MSM548512L-10RS MSM548512L-12RS MSM548512L-80GS-K MSM548512L-10GS-K MSM548512L-12GS-K Access Time (Max.) 80 ns 100 ns 120 ns 80 ns 100 ns 120 ns 525 mil 32-pin Plastic SOP 600 mil 32-pin Plastic DIP Package 1/12 .. ¡ Semiconductor PIN CONFIGURATION (TOP VIEW) A18 1 A16 2 A14 3 A12 4 A7 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 I/O0 13 I/O1 14 I/O2 15 VSS 16 32-Pin Plastic DIP 32 VCC 31 A15 30 A17 29 WE 28 A13 27 A8 26 A9 25 A11 24 OE/RFSH 23 A10 22 CE 21 I/O7 20 I/O6 19 I/O5 18 I/O4 17 I/O3 A18 1 A16 2 A14 3 A12 4 A7 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 I/O0 13 I/O1 14 I/O2 15 VSS 16 , 32-Pin Plastic SOP 32 VCC 31 A15 30 A17 29 WE 28 A13 27 A8 26 A9 25 A11 24 OE/RFSH 23 A10 22 CE 21 I/O7 20 I/O6 19 I/O5 18 I/O4 17 I/O3 Pin...