Datasheet4U Logo Datasheet4U.com

MSM548512L - High-Speed PSRAM

Description

The MSM548512L is fabricated using OKI’s CMOS silicon gate process technology.

This process, coupled with single-transister memory storage cells, permits maximum circuit density, minimum chip size and high speed.

Features

  • a static RAM-like write function that writes the data into the memory cell at the rising edge of WE.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MSM54V24616 SDRAM OKI
MSM5052 Built-in Temperature Circuit and LCD Driver 4-Bit Microcontroller OKI electronic componets
MSM511000A 1M X 1-Bit DRAM OKI Semiconductor
MSM511000C DRAM / FAST PAGE MODE TYPE OKI electronic componets
MSM5114RS 4096-Bit CMOS Static RAM OKI Semiconductor

Other Datasheets by OKI Electric

Part Number Description
MSM548128BL High-Speed PSRAM
MSM548262 Multiport DRAM
MSM548263 Multiport DRAM
MSM548331 Field Memory
MSM548332 Field Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
E2L0044-17-Y1 www.DataSheet4U.com ¡ Semiconductor ¡ Semiconductor MSM548512L 524,288-Word ¥ 8-Bit High-Speed PSRAM This version: Jan. 1998 MSM548512L Previous version: Dec. 1996 DESCRIPTION The MSM548512L is fabricated using OKI’s CMOS silicon gate process technology. This process, coupled with single-transister memory storage cells, permits maximum circuit density, minimum chip size and high speed. MSM548512L has Self-refresh mode in addition to Address-refresh mode and Auto-refresh mode. In the Self-refresh mode the internal refresh timer and address counter refresh the dynamic memory cells automatically. This series allows low power consumption when using standby mode with Self-refresh.
Published: |