MSM54V24616 Datasheet | OKI Electric

DESCRIPTION The MSM54V24616 is a 131,072-word - 16-bit - 2-bank synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL patible. This device can operate up to 125MHz by using synchronous interface. FEATURES - 131,072-words - 16-bit - 2 banks configuration - Single 3.3 V± 10% power supply - LVTTL patible inputs and outputs .. - All input signals are latched at rising edge of system clock - Auto precharge and controlled precharge - Internal pipelined operation: column address can be changed every clock cycle - Dual internal banks controlled by A9 (Bank Address: BA) - Independent byte operation via DQML and DQMU - Programmable burst sequence (Sequential / Interleave) - Programmable burst length (1, 2, 4, 8 and full page) - Programmable CAS latency (1, 2 and 3) - Programmable Write burst (Burst write / Single write) - Burst stop function (full-page burst) - Power Down operation and Active Power Down (Clock Suspend) operation - Auto refresh and Self refresh capability - Refresh period: 1,024 cycles / 16 ms - Package options: 50-pin plastic TSOP (type II) (TSOPII50-P-400-0.80-K) (Product : MSM54V24616-xx TS-K) xx indicates speed rank. PRODUCT FAMILY Family MSM54V24616-8 MSM54V24616-10 MSM54V24616-12 Max. Frequency 125 MHz 100 MHz 83MHz Access Time (Max.) t AC1 22 ns 27 ns 32 ns t AC2 10 ns 12 ns 15 ns t AC3 7 ns 9 ns 10 ns Power Dissipation Operating (Max.) Standby (Max.) 648 m W 540 m W 468 m W 7.2 m W ¡ Semiconductor PIN CONFIGURATION (TOP VIEW) .. VCC DQ0 DQ1 VSS(Q) DQ2 DQ3 VCC(Q) DQ4 DQ5 VSS(Q) DQ6 DQ7 VCC(Q) DQML WE CAS RAS CS A9 A8 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 VSS 49 DQ15 48 DQ14 47 VSS(Q) 46 DQ13 45 DQ12 44 VCC(Q) 43 DQ11 42 DQ10 41 VSS(Q) 40 DQ9 39 DQ8 38 VCC(Q) 37 NC 36 DQMU 35 CLK 34 CKE 33 NC 32 NC 31 NC 30 A7 29 A6 28 A5 27 A4 26 VSS 50-Pin Plastic TSOP (II) (K Type) Pin Name CLK CS CKE A0 - A8 A9...