2SC4614 - Bipolar Transistor

onsemi

Key Features

http://onsemi. com Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (--)180 (--)160 (--)6 (--)1.5 (--)2.5 1 150 --55 to +150 Unit V V V.

2SC4614 bipolar transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	2SC4614
Manufacturer	onsemi
File Size	618.75 KB
Description	Bipolar Transistor
Datasheet	2SC4614 Datasheet

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Ordering number : EN3578A 2SA1770/2SC4614 Bipolar Transistor (–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single NMP Features • • http://onsemi.com Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (--)180 (--)160 (--)6 (--)1.5 (--)2.5 1 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.