SeCoS Halbleitertechnologie GmbH 2SC4617
NPN General Purpose Transistor
FEATURES
z SOT-523 Dim A L z Low Cob. Cob=3.5pF Complementary pair with 2SA1774 S Min 1.50 0.75 0.70 0.25 0.90 0.00 0.10 0.28 0.75 1.45 Max 1.70 0.85 0.90 0.33 1.10 0.10 0.20 0.44 0.85 1.75 A B 3. Top View C D B 1. 2. G H J D G C H K J K L S All Dimension in mmABSOLUTE MAXIMUM RATINGS
at Ta = 25°C PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Power Dissipation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC Pc TJ, TSTG RATINGS 60 50 7 0.15 0.15 +150, -55 ~ +150 UNIT V V V A W ℃ABSOLUTE MAXIMUM RATINGS
ANDELECTRICAL CHARACTERISTICS
at Ta = 25°C PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance TEST CONDITIONS IC = 50 µA IC = 1mA IE = 50 µA VCB = 60V VEB = 7V IC / IB = 50mA / 5mA VCE = 6V, IC = 1mA VCE = 12V, IE = 2mA, f = 100MHz VCE = 12V, IE = 0A, f = MHz SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE fT COB MIN.