2SK3745LS
Features
- Low ON-resistance, low input capacitance, ultrahigh-speed switching
- High reliability (Adoption of HVP process)
- Micaless package facilitating mounting
- Avalanche resistance guarantee
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS ID- IDP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse)
- 1
Avalanche Current
- 2
- Shows chip capability
- 1 VDD=50V, L=20m H, IAV=2A (Fig.1)
- 2 L≤20m H, single pulse
Tch Tstg EAS IAV
Tc=25°C
Conditions
Ratings 1500 ±20 2 4 2.0 35 150
--55 to +150 41 2
Unit V V A A W W °C °C m J A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability.
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