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2SK3746 - N-Channel Power MOSFET

Key Features

  • Low ON-resistance, low input capacitance, ultrahigh-speed switching.
  • High reliability (Adoption of HVP process).
  • Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Avalanche Energy (Single Pulse).
  • 1 Avalanche Current.
  • 2.
  • 1 VDD=5.

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Datasheet Details

Part number 2SK3746
Manufacturer onsemi
File Size 186.37 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK3746 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN8283A 2SK3746 N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-3P-3L http://onsemi.com Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • High reliability (Adoption of HVP process) • Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1 VDD=50V, L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse Tch Tstg EAS IAV Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 1500 ±20 2 4 2.