• Part: 2SK3747
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 184.76 KB
Download 2SK3747 Datasheet PDF
onsemi
2SK3747
Features - Low ON-resistance, low input capacitance, ultrahigh-speed switching - High reliability (Adoption of HVP process) - Attachment workability is good by Mica-less package - Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) - 1 Avalanche Current - 2 EAS IAV Note :- 1 VDD=50V, L=20m H, IAV=2A (Fig.1) - 2 L≤20m H, single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 1500 ±35 2 4 3.0 50 150 --55 to +150 41 2 Unit V V A A W W °C °C m J A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device...