AFGHL30T65RQDN
AFGHL30T65RQDN is IGBT manufactured by onsemi.
IGBT for Automotive Application
650 V, 30 A
Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses.
Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co- efficient for Easy Parallel Operation
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.57 V (Typ.) @ IC = 30 A
- 100% of the Parts Tested for ILM (Note 2)
- High Input Impedance
- Fast Switching
- Tightened Parameter Distribution
- This Device is Pb- Free and Ro HS pliant
Typical Applications
- E- pressor for HEV/EV, PTC heater for HEV/EV
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector- to- Emitter Voltage
Gate- to- Emitter Voltage Transient Gate- to- Emitter Voltage
VCES VGES
±20
±30
Collector Current (Note 1) @ TC = 25°C @ TC = 100°C
Pulsed Collector Current (Note 2)
Pulsed Collector Current (Note 3)
Diode Forward Current (Note 1) @ TC = 25°C @ TC = 100°C
Pulsed Diode Maximum Forward Current
Non- Repetitive Forward Surge Current (Half- Sine Pulse, tp = 8.3 ms, TC = 25°C) (Half- Sine Pulse, tp = 8.3 ms, TC = 150°C)
Short Circuit Withstand Time VGE = 15 V, VCC = 400 V, TC =...
