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AFGHL30T65RQDN - IGBT

Product Overview

ON Semiconductor

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AFGHL30T65RQDN IGBT by ON Semiconductor - Datasheet Preview — Datasheet preview – AFGHL30T65RQDN

Datasheet Details

Part number	AFGHL30T65RQDN
Manufacturer	ON Semiconductor
File Size	324.20 KB
Description	IGBT
Datasheet	AFGHL30T65RQDN Datasheet
Additional preview pages of the AFGHL30T65RQDN datasheet.

Product details

Features

Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
efficient for Easy Parallel Operation.
High Current Capability.
Low Saturation Voltage: VCE(Sat) = 1.57 V (Typ. ) @ IC = 30 A.
100% of the Parts Tested for ILM (Note 2).
High Input Impedance.
Fast Switching.
Tightened Parameter Distribution.
This Device is Pb.
Free and RoHS Compliant Typical.

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Published: Oct 3, 2022 |