AFGHL40T120RHD
AFGHL40T120RHD is IGBT manufactured by onsemi.
IGBT for Automotive Application
1200 V, 40 A
Description This Insulated Gate Bipolar Transistor (IGBT) Features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss, which is AEC Q101 qualified offer the optimum performance for both hard and soft switching topology in automotive application.
Features
- Extremely Efficient Trench with Field Stop Technology
- Maximum Junction Temperature: TJ = 175°C
- Short Circuit Withstand Time 9 ms
- 100% of the Parts Tested for ILM (Note 2)
- Fast Switching
- Tighten Parameter Distribution
- AEC- Q101 Qualified and PPAP Capable
- This Device is Pb- Free, Halogen Free/BFR Free and is Ro HS pliant
Typical Applications
- Automotive HEV- EV E- pressor
- Automotive HEV- EV PTC Heater
- Automotive HEV- EV Onboard Chargers
- Automotive HEV- EV DC- DC Converters
.onsemi.
VCES 1200 V
IC 40 A
VCE(Sat) 2.0 V (Typ.)
G C E TO- 247- 3L CASE 340CX
MARKING DIAGRAM
AFG40T 120RHD $Y&Z&3&K
© Semiconductor ponents Industries, LLC, 2021
April, 2021
- Rev. 1
AFG40T120RHD $Y &Z &3 &K
= Specific Device Code = ON Semiconductor Logo = Assembly Plant Code = 3- Digit Date Code = 2- Digit Lot Traceability Code
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