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BC337 - NPN Epitaxial Silicon Transistor

General Description

TO

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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Key Features

  • Switching and Amplifier.

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Datasheet Details

Part number BC337
Manufacturer onsemi
File Size 186.43 KB
Description NPN Epitaxial Silicon Transistor
Datasheet download datasheet BC337 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN Epitaxial Silicon Transistor BC337 Features • Switching and Amplifier Applications • Suitable for AF−Driver Stages and Low−Power Output Stages • Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCES Collector−Emitter Voltage 50 V VCEO Collector−Emitter Voltage 45 V VEBO Emitter−Base Voltage 5 V IC Collector Current (DC) 800 mA TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted.