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ON Semiconductort
Driver Transistor
NPN Silicon
BSS64LT1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR–5 Board(1)
TA = 25°C Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BSS64LT1 = AM
Symbol
VCEO VCBO VEBO
IC
Value 80 120 5.0 100
Symbol PD
RqJA PD
RqJA TJ, Tstg
Max 225
1.8 556 300
2.4 417 –55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 4.
BSS64LT1 Datasheet
