Datasheet4U Logo Datasheet4U.com

BSS64LT1G - Driver Transistor

General Description

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

23 (TO 236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2 onsemi and are trademarks of Semiconduc

Key Features

  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number BSS64LT1G
Manufacturer onsemi
File Size 166.00 KB
Description Driver Transistor
Datasheet download datasheet BSS64LT1G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSS64LT1 NPN Transistor Motorola
BSS64 NPN General Purpose Amplifier Fairchild Semiconductor
BSS64 NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) Siemens Semiconductor Group
BSS64 NPN Silicon AF and Switching Transistors Infineon Technologies AG
BSS64 High-voltage Amplifier Transistor ROHM

Other Datasheets by onsemi

Part Number Description
BSS64LT1 Driver Transistor
BSS63LT1G High Voltage Transistor
BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS123LT1 Power MOSFET
BSS123LT1G N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Driver Transistor NPN Silicon BSS64LT1G Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC Value 80 120 5.0 100 Unit Vdc Vdc Vdc mAdc Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Symbol PD Max 225 1.8 Unit mW mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.