CPH6636R - N-Channel Power MOSFET

onsemi

Key Features

Low On-resistance.
Best suited for LiB charging and discharging switch.
With a built-in gate resistor.
Protection diode in.
2.5V drive.
Common-drain type.
Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation VDSS VGSS ID IDP PD PT PW≤10μs, d.

CPH6636R n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	CPH6636R
Manufacturer	onsemi
File Size	322.38 KB
Description	N-Channel Power MOSFET
Datasheet	CPH6636R Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
CPH6602	Ultrahigh-speed Switching	Sanyo Semiconductor Corporation
CPH6605	N-Channel and P-Channel Silicon MOSFETs	Sanyo Semicon Device
CPH6612	N-Channel Silicon MOSFET	Sanyo Semicon Device
CPH6613	N-Channel Silicon MOSFET	Sanyo Semicon Device
CPH6614	N-Channel and P-Channel Silicon MOSFETs	Sanyo Semicon Device

Other Datasheets by onsemi

Part Number	Description
CPH6635	Power MOSFET
CPH6001A	RF Transistor
CPH6003A	RF Transistor
CPH6020	RF Transistor
CPH6021	RF Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Ordering number : ENA2224 CPH6636R N-Channel Power MOSFET 24V, 6A, 20mΩ, Dual CPH6 Common Drain http://onsemi.com Features • Low On-resistance • Best suited for LiB charging and discharging switch • With a built-in gate resistor • Protection diode in • 2.5V drive • Common-drain type • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation VDSS VGSS ID IDP PD PT PW≤10μs, duty cycle≤1% When mounted on ceramic substrate(900mm2×0.8mm) 1unit When mounted on ceramic substrate(900mm2×0.8mm) Channel Temperature Tch Storage Temperature Tstg Ratings 24 ±12 6 36 0.9 1.