EGP10A - High-Efficiency Rectifier

onsemi

General Description

AXIAL LEAD / DO

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Key Features

Superfast Recovery Time for High Efficiency.
Low Forward Voltage, High Current Capability.
Low Leakage Current.
High Surge Current Capability www. onsemi. com.

📥 Download Datasheet

EGP10A high-efficiency rectifier by onsemi - Datasheet Preview

Datasheet Details

Part number	EGP10A
Manufacturer	onsemi
File Size	148.90 KB
Description	High-Efficiency Rectifier
Datasheet	EGP10A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
EGP10A	SUPER FAST RECOVERY RECTIFIER	RFE
EGP10A	GLASS PASSIVATED FAST EFFICIENT RECTIFIER	General
EGP10A	1.0 Amp Glass Passivated High Efficient Rectifiers	MCC
EGP10A	SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER	Zowie
EGP10A	1 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier	FAGOR

Other Datasheets by onsemi

Part Number	Description
EGP10B	High-Efficiency Rectifier
EGP10C	High-Efficiency Rectifier
EGP10D	High-Efficiency Rectifier
EGP10F	High-Efficiency Rectifier
EGP10G	High-Efficiency Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

High Efficiency Rectifier 1.0 A Glass Passivated EGP10A - EGP10K Features • Superfast Recovery Time for High Efficiency • Low Forward Voltage, High Current Capability • Low Leakage Current • High Surge Current Capability www.onsemi.com ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Units IO If(surge) Average Rectified Current 0.375 ” lead length @ TL = 75_C Peak Forward Surge Current 8.3 ms single half−sine−wave Superimposed on rated load (JEDEC method) 1.0 A 30 A PD Total Device Dissipation Derate above 25_C 2.5 W 17 mW°C IC Thermal Resistance, Junction to Ambient 50 °C/W TJ, TSTG Junction and Storage Temperature Range −65 ~ 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.