EMH2417R - N-Channel Power MOSFET

onsemi

Key Features

Low On-resistance.
2.5V drive.
Common-drain type.
Protection diode in.
Built-in gate protection resistor.
Best suited for LiB charging and discharging switch.
Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current (Pulse) Power Dissipation Total Dissipation Junction Temperature ID IDP PW10s, duty cycle1% PD.

EMH2417R n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	EMH2417R
Manufacturer	onsemi
File Size	398.71 KB
Description	N-Channel Power MOSFET
Datasheet	EMH2417R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA2313A EMH2417R N-Channel Power MOSFET 12V, 11A, 10mΩ, Dual EMH8 Common Drain http://onsemi.com Features  Low On-resistance  2.5V drive  Common-drain type  Protection diode in  Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current (Pulse) Power Dissipation Total Dissipation Junction Temperature ID IDP PW10s, duty cycle1% PD When mounted on ceramic substrate(900mm20.8mm) 1unit PT When mounted on ceramic substrate(900mm20.8mm) Tj Storage Temperature Tstg Value 12 12 11 40 1.3 1.