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EMH2418R - N-Channel Power MOSFET

Key Features

  • Low On-resistance.
  • 2.5V drive.
  • Common-Drain Type.
  • Protection diode in.
  • Built-in gate protection resistor.
  • Best suited for LiB charging and discharging switch.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP PW10s, duty cycle1% Power Dissipation When mounted on ceramic substrate(900mm20.8mm) 1unit Total.

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Datasheet Details

Part number EMH2418R
Manufacturer onsemi
File Size 333.49 KB
Description N-Channel Power MOSFET
Datasheet download datasheet EMH2418R Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA2267A EMH2418R N-Channel Power MOSFET 24V, 9A, 15mΩ, Dual EMH8 http://onsemi.com Features  Low On-resistance 2.5V drive  Common-Drain Type  Protection diode in  Built-in gate protection resistor  Best suited for LiB charging and discharging switch Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP PW10s, duty cycle1% Power Dissipation When mounted on ceramic substrate(900mm20.8mm) 1unit Total Dissipation When mounted on ceramic substrate(900mm20.8mm) JunctionTemperature Storage Temperature PD PT Tj Tstg Value 24 12 9 40 Unit V V A A 1.3 W 1.