FCP600N65S3R0 Datasheet | onsemi

MOSFET - Power, N-Channel, SUPERFET[ III, Easy Drive 650 V, 600 m W, 6 A Description SUPERFET III MOSFET is ON Semiconductor’s brand- new high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features - 700 V @ TJ = 150°C - Typ. RDS(on) = 493 m W - Ultra Low Gate Charge (Typ. Qg = 11 n C) - Low Effective Output Capacitance (Typ. Coss(eff.) = 127 p F) - 100% Avalanche Tested - These Devices are Pb- Free and are Ro HS pliant Applications - puting / Display Power Supplies - Tele / Server Power Supplies - Industrial Power Supplies - Lighting / Charger / Adapter .onsemi. VDSS 650 V RDS(ON) MAX 600 m W @ 10 V ID MAX 6A S N-Channel MOSFET GDS TO- 220 CASE 340AT MARKING DIAGRAM © Semiconductor ponents Industries, LLC, 2017 July, 2020 - Rev. 6 $Y&Z&3&K FCP600 N65S3R0 $Y &Z &3 &K FCP600N65S3R0 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device...