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FDB0690N1507L - N-Channel Power MOSFET

General Description

This N-Channel MOSFET is produced using ON Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.

High Performance Trench Technology for

Key Features

  • Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 17 A.
  • Fast Switching Speed.
  • Low Gate Charge General.

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FDB0690N1507L N-Channel PowerTrench® MOSFET FDB0690N1507L N-Channel PowerTrench® MOSFET 150 V, 115 A, 6.9 mΩ Features „ Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 17 A „ Fast Switching Speed „ Low Gate Charge General Description This N-Channel MOSFET is produced using ON Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.