FDB1D7N10CL7 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in class soft body diode.
FDB1D7N10CL7 Key Features
- Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A
- Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A
- Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A
- Max RDS(on) = 4.4 mΩ at VGS = 6 V, ID = 63 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- ESD Protection Level: HBM > 4 kV, CDM > 2 kV
- MSL1 Robust Package Design
- 100% UIL Tested