FDC3612
FDC3612 is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
- 2.6 A, 100 V
RDS(ON) = 125 m W @ VGS = 10 V RDS(ON) = 135 m W @ VGS = 6 V
- High Performance Trench Technology for Extremely Low RDS(ON)
- Low Gate Charge (14 n C Typical)
- High Power and Current Handling Capability
- Fast Switching Speed
- This is a Pb- Free Device
Applications
- DC/DC Converter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS Drain- Source Voltage
VGSS Gate- Source Voltage
±20
Drain Current
Continuous (Note 1a)
Pulsed
EAS Single Pulse Avalanche Energy (Note 3)
Maximum Power (Note 1a)
Dissipation
(Note 1b)
37 m J
TJ, TSTG Operating and Storage Temperature Range
- 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter...
