FDG6321C - Dual-Channel Digital FET

Product Overview

ON Semiconductor

Part number	FDG6321C
Manufacturer	ON Semiconductor
File Size	229.09 KB
Description	Dual-Channel Digital FET
Datasheet	FDG6321C Datasheet
Additional preview pages of the FDG6321C datasheet.

These dual N & P

effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

N.
Ch 0.50 A, 25 V.
RDS(ON) = 0.45 W @ VGS = 4.5 V.
RDS(ON) = 0.60 W @ VGS = 2.7 V.
P.
Ch.
0.41 A,.
25 V.
RDS(ON) = 1.1 W @ VGS =.
4.5 V.
RDS(ON) = 1.5 W @ VGS =.
2.7 V.
Very Small Package Outline SC70.
6.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V).
Gate.
Source Zener for ESD Ruggedness (>6 kV Human B.

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Published: Dec 24, 2023 |