FDMA3023PZ Datasheet | onsemi

Description This Device is Designed Specifically as a Single Package Solution for the battery charge switch in cellular handset and other Ultra- Portable Applications. It features two independent P- Channel MOSFETs with low on- state resistance for minimum conduction losses. When connected in the typical mon source configuration, bi- directional current flow is possible. The Micro FET 2X2 Package Offers Exceptional Thermal Performance for its physical size and is well suited to linear mode applications. Features - Max RDS(on) = 90 m W at VGS = - 4.5 V, ID = - 2.9 A - Max RDS(on) = 130 m W at VGS = - 2.5 V, ID = - 2.6 A - Max RDS(on) = 170 m W at VGS = - 1.8 V, ID = - 1.7 A - Max RDS(on) = 240 m W at VGS = - 1.5 V, ID = - 1.0 A - Low Profile - 0.8 mm Maximum - in the New Package Micro FET™ 2x2 mm - HBM ESD Protection > 2 k V (Note 3) - These Devices is Pb- Free, Halide Free and is Ro HS pliant - Free From Halogenated pounds and Antimony Oxides ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (Note 1a) - Pulsed -...