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MOSFET – Dual P-Channel POWERTRENCH)
-30 V, -3.3 A, 87 mW
FDMA3027PZ, FDMA3027PZ-F130
Description This device is designed specifically as a single package solution for
dual switching requirements such as gate driver for larger Mosfets. It features two independent P−Channel MOSFETs with low on−state resistance for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G−S zener has been added to enhance ESD voltage level.
Features
• Max RDS(on) = 87 mW at VGS = −10 V, ID = −3.3 A • Max RDS(on) = 152 mW at VGS = −4.5 V, ID = −2.3 A • HBM ESD Protection Level > 2 kV Typical (Note 3) • Low Profile − 0.
FDMA3027PZ Datasheet
