FDMC2D8N025S Description
Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A High Performance Technology for Extremely Low rDS(on) SyncFETTM Schottky Body Diode 100% UIL Tested RoHS pliant The FDMC2D8N025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining...
FDMC2D8N025S Key Features
- Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A
- Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A
- High Performance Technology for Extremely Low rDS(on)
- SyncFETTM Schottky Body Diode
- 100% UIL Tested
- RoHS pliant