FDMC7570S - N-Channel MOSFET

onsemi

General Description

conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance.

Key Features

Max RDS(on) = 2 mW at VGS = 10 V, ID = 27 A.
Max RDS(on) = 2.9 mW at VGS = 4.5 V, ID = 21.5 A.
Advanced Package and Combination for Low RDS(on) and High Efficiency.
SyncFET Schottky Body Diode.
100% UIL Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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FDMC7570S n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC7570S
Manufacturer	onsemi
File Size	456.00 KB
Description	N-Channel MOSFET
Datasheet	FDMC7570S Datasheet

Full PDF Text Transcription for FDMC7570S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDMC7570S. For precise diagrams, and layout, please refer to the original PDF.

MOSFET – N-Channel, POWERTRENCH), SyncFETt 25 V, 40 A, 2 mW FDMC7570S General Description The FDMC7570S has been designed to minimize losses in power conversion applicati...

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70S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Features • Max RDS(on) = 2 mW at VGS = 10 V, ID = 27 A • Max RDS(on) = 2.9 mW at VGS = 4.5 V, ID = 21.

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