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FDME910PZT-P-Q - P-Channel MOSFET

This page provides the datasheet information for the FDME910PZT-P-Q, a member of the FDME910PZT P-Channel MOSFET family.

Description

switching in cellular handset and other ultraportable applications.

Features

  • a MOSFET with low on.
  • state resistance and zener diode protection against ESD. The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode.

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Datasheet preview – FDME910PZT-P-Q

Datasheet Details

Part number FDME910PZT-P-Q
Manufacturer onsemi
File Size 283.42 KB
Description P-Channel MOSFET
Datasheet download datasheet FDME910PZT-P-Q Datasheet
Additional preview pages of the FDME910PZT-P-Q datasheet.

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Full PDF Text Transcription

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MOSFET – P-Channel POWERTRENCH) -20 V, -8 A, 24 mW FDME910PZT, FDME910PZT-P, FDME910PZT-P-Q General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance and zener diode protection against ESD. The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. Features • Max RDS(on) = 24 mW at VGS = −4.5 V, ID = −8 A • Max RDS(on) = 31 mW at VGS = −2.5 V, ID = −7 A • Max RDS(on) = 45 mW at VGS = −1.8 V, ID = −6 A • Low Profile: 0.55 mm Maximum in the New Package MicroFET 1.6x1.
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