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MOSFET – P-Channel POWERTRENCH)
-20 V, -8 A, 24 mW
FDME910PZT, FDME910PZT-P, FDME910PZT-P-Q
General Description This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance and zener diode protection against ESD. The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Features
• Max RDS(on) = 24 mW at VGS = −4.5 V, ID = −8 A • Max RDS(on) = 31 mW at VGS = −2.5 V, ID = −7 A • Max RDS(on) = 45 mW at VGS = −1.8 V, ID = −6 A • Low Profile: 0.55 mm Maximum in the New Package MicroFET
1.6x1.
FDME910PZT Datasheet
