FDPF041N06BL1-F154 Description
This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.
FDPF041N06BL1-F154 Key Features
- RDS(on) = 3.5 mW (Typ.)@ VGS = 10 V, ID = 77 A
- Low FOM RDS(on)-QG
- Low Reverse Recovery Charge, Qrr
- Soft Reverse Recovery Body Diode
- Enables Highly Efficiency in Synchronous Rectification
- Fast Switching Speed
- 100% UIL Tested
- These Devices are Pb-Free and are RoHS pliant
FDPF041N06BL1-F154 Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit