Description
This N
Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been tailored to minimize the on
state resistance while maintaining superior switching performance.
Features
- RDS(on) = 3.5 mW (Typ. )@ VGS = 10 V, ID = 77 A.
- Low FOM RDS(on).
- QG.
- Low Reverse Recovery Charge, Qrr.
- Soft Reverse Recovery Body Diode.
- Enables Highly Efficiency in Synchronous Rectification.
- Fast Switching Speed.
- 100% UIL Tested.
- These Devices are Pb.
- Free and are RoHS Compliant.
FDPF041N06BL1-F154 Datasheet
