FDS8449 - N-Channel MOSFET

onsemi

General Description

These N Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on

state resistance and yet maintain superior switching performance.

Key Features

7.6 A, 40 V RDS(on) = 29 mW @ VGS = 10 V RDS(on) = 36 mW @ VGS = 4.5 V.
High Power Handling Capability in a Widely Used Surface Mount Package.
Pb.
Free, Halide Free and RoHS Compliant.

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FDS8449 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDS8449
Manufacturer	onsemi
File Size	239.96 KB
Description	N-Channel MOSFET
Datasheet	FDS8449 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 40 V, 7.6 A, 29 mW FDS8449, FDS8449-G General Description These N−Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. Features • 7.6 A, 40 V RDS(on) = 29 mW @ VGS = 10 V RDS(on) = 36 mW @ VGS = 4.5 V • High Power Handling Capability in a Widely Used Surface Mount Package • Pb−Free, Halide Free and RoHS Compliant ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDSS VGSS ID Drain to Source Voltage Gate to Source Voltage Drain Current − Continuous (Note 1a) − Pulsed 40 V ±20 V A 7.6 50 PD Power Dissipation for Single Operation W (Note 1a) 2.