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FGB40T65SPD-F085 Datasheet

IGBT

Manufacturer: onsemi

FGB40T65SPD-F085 Overview

Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation.

FGB40T65SPD-F085 Key Features

  • Low Saturation Voltage: VCE(sat) = 2.0 V (Typ.) @ IC = 40 A
  • 100% of the Parts are Dynamically Tested
  • Short Circuit Ruggedness > 5 ms @ 25°C
  • Maximum Junction Temperature : TJ = 175°C
  • Fast Switching
  • Tight Parameter Distribution
  • Positive Temperature Coefficient for Easy Parallel Operation
  • Copacked with Soft, Fast Recovery Diode
  • AEC-Q101 Qualified and PPAP Capable
  • This Device is Pb-Free and are RoHS pliant

FGB40T65SPD-F085 Distributor