FGB40T65SPD-F085 Description
Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high current switching reliability. Meanwhile, this part also offers and advantage of outstanding performance in parallel operation.
FGB40T65SPD-F085 Key Features
- Low Saturation Voltage: VCE(sat) = 2.0 V (Typ.) @ IC = 40 A
- 100% of the Parts are Dynamically Tested
- Short Circuit Ruggedness > 5 ms @ 25°C
- Maximum Junction Temperature : TJ = 175°C
- Fast Switching
- Tight Parameter Distribution
- Positive Temperature Coefficient for Easy Parallel Operation
- Copacked with Soft, Fast Recovery Diode
- AEC-Q101 Qualified and PPAP Capable
- This Device is Pb-Free and are RoHS pliant