Description
Using the novel field stop 3rd generation IGBT technology,
FGH40T65SPD
F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high current switching r
Features
- Low Saturation Voltage: VCE(sat) = 2.0 V (Typ. ) @ IC = 40 A.
- 100% of the Parts are Dynamically Tested.
- Short Circuit Ruggedness > 5 ms @ 25°C.
- Maximum Junction Temperature : TJ = 175°C.
- Fast Switching.
- Tight Parameter Distribution.
- Positive Temperature Coefficient for Easy Parallel Operation.
- Copacked with Soft, Fast Recovery Diode.
- AEC.
- Q101 Qualified and PPAP Capable.
- This Device is Pb.
FGB40T65SPD-F085 Datasheet
