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PNP Low-Saturation Transistor
FMMT549
This device is designed with high−current gain and low−saturation voltage with collector currents up to 2 A continuous. Sourced from process PB.
ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted.) (Notes 1, 2)
Symbol
Parameter
Value
Unit
VCEO Collector−Emitter Voltage
−30
V
VCBO VEBO
IC
Collector−Base Voltage
Emitter−Base Voltage
Collector Current Continuous Peak Pulse Current
−35
V
−5
V
A −1 −2
TJ
Junction Temperature
150
C
TSTG Storage Temperature Range
−55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected. 1.
FMMT549 Datasheet
