FODM291 - Phototransistor Optocoupler

onsemi

Key Features

Current Transfer Ratio Ranges from 80 to 600% at IF = 5 mA, VCE = 5 V, TA = 25°C.
FODM291A.
80 to 160%.
FODM291B.
130 to 260%.
FODM291C.
200 to 400%.
FODM291D.
300 to 600%.
Safety and Regulatory Approvals:.
UL1577, 3750 VACRMS for 1 min.
DIN EN/IEC60747.
5.
5, 565 V Peak Working Insulation Voltage (Pending).
Applicable to Infrared Ray Reflow, 260°C Typical Applicati.

FODM291 phototransistor optocoupler by onsemi - Datasheet Preview

Datasheet Details

Part number	FODM291
Manufacturer	onsemi
File Size	502.32 KB
Description	Phototransistor Optocoupler
Datasheet	FODM291 Datasheet

Other Datasheets by onsemi

Part Number	Description
FODM291A	Phototransistor Optocoupler
FODM291B	Phototransistor Optocoupler
FODM291C	Phototransistor Optocoupler
FODM291D	Phototransistor Optocoupler
FODM214	Phototransistor Optocoupler
FODM217	Phototransistor Optocoupler
FODM181A	Phototransistor Optocoupler
FODM181B	Phototransistor Optocoupler
FODM181C	Phototransistor Optocoupler
FODM181D	Phototransistor Optocoupler

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package FODM291 Series The FODM291 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 1.27 mm.