FODM291B Description
Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package FODM291 Series The FODM291 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a pact, half−pitch, mini−flat, 4−pin package. The lead pitch is 1.27 mm.
FODM291B Key Features
- Current Transfer Ratio Ranges from 80 to 600%
- FODM291A
- 80 to 160%
- FODM291B
- 130 to 260%
- FODM291C
- 200 to 400%
- FODM291D
- 300 to 600%
- Safety and Regulatory Approvals
FODM291B Applications
- Primarily Suited for DC−DC Converters
- For Ground Loop Isolation, Signal to Noise Isolation